Manufacturing method of three-dimensional semiconductor device

ABSTRACT

There are provided a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes: a source layer; a channel structure extending in a first direction from within the source layer; a source-channel contact layer surrounding the channel structure on the source layer; a first select gate layer overlapping with the source-channel contact layer and surrounding the channel structure; a stack including interlayer insulating layers and conductive patterns that are alternately stacked in the first direction and surrounding the channel structure, the stack overlapping with the first select gate layer; and a first insulating pattern that is formed thicker between the first select gate layer and the channel structure than between the stack and the channel structure.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a divisional application of U.S. patentapplication Ser. No. 16/925,925, filed on Jul. 10, 2020, and claimspriority under 35 U.S.C. § 119(a) to Korean patent application number10-2020-0005635, filed on Jan. 15, 2020, in the Korean IntellectualProperty Office, the entire disclosure of which is incorporated hereinby reference.

BACKGROUND 1. Technical Field

Various embodiments of the present disclosure relate to a semiconductormemory device and a manufacturing method thereof, and more particularly,to a three-dimensional semiconductor memory device and a manufacturingmethod thereof.

2. Related Art

A semiconductor memory device may include a plurality of memory cellsthat are capable of storing data. A three-dimensional semiconductormemory device may include memory cells that are three-dimensionallyarranged.

The data that is stored in the memory cells of the three-dimensionalsemiconductor memory device may be erased by a Gate Induced DrainLeakage (GIDL) erase operation. The GIDL erase operation may beperformed to inject holes into channels of the memory cells bygenerating the GIDL current.

SUMMARY

In accordance with an embodiment of a semiconductor memory device mayinclude: a source layer; a channel structure extending in a firstdirection from within the source layer; a source-channel contact layersurrounding the channel structure on the source layer; a first selectgate layer overlapping with the source-channel contact layer andsurrounding the channel structure; a stack including interlayerinsulating layers and conductive patterns that are alternately stackedin the first direction and surrounding the channel structure, the stackoverlapping with the first select gate layer; and a first insulatingpattern that is formed thicker between the first select gate layer andthe channel structure than between the stack and the channel structure.

In accordance with an embodiment of a method of manufacturing asemiconductor memory device may include: forming a sacrificial sourcelayer on a source layer; forming a first select gate layer on thesacrificial source layer; alternately stacking a sacrificial layer andan interlayer insulating layer on the first select gate layer; forming ahole in which an insulating structure covers a surface within the hole,wherein the hole penetrates the interlayer insulating layer, thesacrificial layer, the first select gate layer, and the sacrificialsource layer, and extends into the source layer; sequentially stacking adata storage layer and a tunnel insulating layer on the insulatingstructure; forming a channel structure on the tunnel insulating layer byfilling the hole with the channel structure; removing the sacrificialsource layer; and expanding the insulating structure by selectivelyoxidizing the first select gate layer from a bottom surface of the firstselect gate layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram illustrating a semiconductor memory device,in accordance with an embodiment of the present disclosure.

FIG. 2 is a sectional view illustrating a cell array of thesemiconductor memory device, in accordance with an embodiment of thepresent disclosure.

FIG. 3 is a perspective view illustrating a first select gate layer anda first insulating pattern shown in FIG. 2 .

FIG. 4 is a perspective view illustrating a first insulating patternshown in FIG. 2 .

FIGS. 5A to 5N are sectional views illustrating a manufacturing methodof a semiconductor memory device, in accordance with an embodiment ofthe present disclosure.

FIG. 6 is a block diagram illustrating a configuration of a memorysystem, in accordance with an embodiment of the present disclosure.

FIG. 7 is a block diagram illustrating a configuration of a computingsystem, in accordance with an embodiment of the present disclosure.

DETAILED DESCRIPTION

The specific structural or functional descriptions disclosed herein aremerely illustrative for the purpose of describing embodiments accordingto the concept of the present disclosure. The embodiments may beimplemented in various forms, and should not be construed as beinglimited to the specific embodiments set forth herein.

It will be understood that although the terms “first”, “second”, “third”etc. are used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another element. Thus, a first element in someembodiments could be termed a second element in other embodimentswithout departing from the teachings of the present disclosure.

Further, it will be understood that when an element is referred to asbeing “connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present.

Various embodiments of the present disclosure provide a semiconductormemory device and a manufacturing method thereof that may improveoperational reliability.

FIG. 1 is a circuit diagram illustrating a semiconductor memory device,in accordance with an embodiment of the present disclosure.

Referring to FIG. 1 , a semiconductor memory device may include aplurality of cell strings CS that are connected to a common source lineCSL and bit lines BL.

Each of the cell strings CS may include a plurality of memory cells MC,a source select transistor SST, and drain select transistors DST1 andDST2, connected in series.

The source select transistor SST may control the electrical connectionbetween a cell string CS and the common source line CSL. The cell stringCS may include one source select transistor or two or more source selecttransistors that are connected in series. For example, FIG. 1illustrates a case when the cell string CS includes one source selecttransistor SST that is connected between the memory cells MC and thecommon source line CSL.

The drain select transistors DST1 and DST2 may control the electricalconnection between a cell string CS and the corresponding bit line BL.The cell string CS may include one drain select transistor or two ormore drain select transistors that are connected in series. For example,FIG. 1 illustrates a case when the cell string CS includes a first drainselect transistor DST1 and a second drain select transistor DST2 thatare connected in series.

The cell string CS may be connected to a source select line SSL, wordlines WLs, and drain select lines DSL1 and DSL2. The source select lineSSL may be connected to a gate electrode of the source select transistorSST, and the word lines WLs may be respectively connected to gateelectrodes of the memory cells MC. The drain select lines DSL1 and DSL2may be respectively connected to gate electrodes of the drain selecttransistors DST1 and DST2 that are included in the cell string CS.

For convenience of recognition, the cell strings CS that are connectedto the common source line CSL and forming one row are shown. However,cell strings may be connected in parallel to the common source line CSLand may be arranged in two or more rows and in two or more columns. Thecell strings of each column may be connected, in parallel, to thecorresponding bit line BL.

FIG. 2 is a sectional view illustrating a cell array of thesemiconductor memory device, in accordance with an embodiment of thepresent disclosure.

Referring to FIG. 2 , the semiconductor memory device may include asource layer SL, channel structures CH that overlaps with the sourcelayer SL and extends in a first direction DR1, a source-channel contactlayer SCC that connects the source layer SL and the channel structuresCH, the source select lines SSL that surround the channel structures CH,stacks ST that surround the channel structures CH on the source selectlines SSL, and the bit line BL that overlaps with the stacks ST andextending in a second direction DR2.

The source layer SL may be configured with the common source line CSL,shown in FIG. 1 . The source layer SL may include a doped semiconductorlayer with an n-type impurity. In an embodiment, the source layer SL mayinclude an n-type doped silicon.

The source-channel contact layer SCC may be in contact with the sourcelayer SL and may extend along the top surface of the source layer SL.The source-channel contact layer SCC may extend between adjacent stacksST. The source-channel contact layer SCC may surround the channelstructures CH between the source layer SL and the source select linesSSL, and the source-channel contact layer SCC may be in contact with asidewall of each of the channel structures CH. The source-channelcontact layer SCC may include a doped semiconductor layer with an n-typeimpurity. In an embodiment, the source-channel contact layer SCC mayinclude an n-type doped silicon.

During an erase operation of the semiconductor memory device, GateInduced Drain Leakage (GIDL) may be generated at the source-channelcontact layer SCC. The source-channel contact layer SCC may extendbetween each of the source select lines SSL and the channel structuresCH. Accordingly, a junction overlap region that overlaps the sourceselect lines SSL may be formed, thereby ensuring a GIDL current.

The source select lines SSL may be spaced apart from each other in thesecond direction DR2 at the same level. Each of the source select linesSSL may include a first select gate layer SG1 and a second select gatelayer SG2 that are stacked in the first direction DR1.

The first select gate layer SG1 may overlap with the source-channelcontact layer SCC, and the first select gate layer SG1 may surround thecorresponding channel structures CH. The second select gate layer SG2may surround the corresponding channel structures CH, between the firstselect gate layer SG1 and the stack ST.

The first select gate layer SG1 may be selectively oxidized during themanufacturing process of the semiconductor memory device, and the firstselect gate layer SG1 may include a material with a high oxidation rate.In an embodiment, the first select gate layer SG1 may include silicon.

The second select gate layer SG2 may include a metal with lowerresistance than the first select gate layer SG1. In an embodiment, thesecond select gate layer SG2 may include a metal and a diffusion barrierlayer. The metal may include tungsten. The diffusion barrier layer mayinclude titanium (Ti) and titanium nitride (TiN), or the diffusionbarrier layer may include titanium nitride (TiN).

Each of the stacks ST may overlap with its corresponding source selectline SSL. Each of the stacks ST may include interlayer insulating layersIL and conductive patterns CP1 to CPn (n is a natural number) that arealternately disposed in the first direction DR1. Each of the interlayerinsulating layers IL and the conductive patterns CP1 to CPn (n is anatural number) may surround its corresponding channel structures CH.

At least one conductive pattern that is adjacent to the bit line BLamong the conductive patterns CP1 to CPn may be used as a drain selectline. In an embodiment, the n-th conductive pattern CPn that is adjacentto the bit line BL and the n−1th conductive pattern CPn−1 that isdisposed under the n-th conductive pattern CPn may form the drain selectlines DSL1 and DSL2, respectively, as described with reference to FIG. 1. The conductive patterns CP1 to CPn−2 that are disposed between thedrain select lines DSL1 and DSL2 and the source select line SSL mayrespectively form the word lines WL as described with reference to FIG.1 . However, the embodiment of the present disclosure is not limitedthereto. In an embodiment, among the conductive patterns CP1 to CPn−2,at least one conductive pattern that is adjacent to the source selectline SSL may form an upper source select line, and the conductivepatterns between the upper source select line and the drain select linesmay form word lines.

The conductive patterns CP1 to CPn may be formed of the same conductivematerial. Each of the conductive patterns CP1 to CPn may include thesame conductive material as the second select gate layer SG2. In anembodiment, each of the conductive patterns CP1 to CPn may include ametal and a diffusion barrier layer.

The channel structures CH may extend from the inside of the source layerSL in the first direction DR1. Each of the channel structures CH mayinclude a sidewall that is in contact with the source-channel contactlayer SCC. Each of the channel structures CH may include a region thatis surrounded by a first insulating pattern IP1 and a region that issurrounded by a second insulating pattern IP2. The first insulatingpattern IP1 and the second insulating pattern IP2 may be separated fromeach other by the source-channel contact layer SCC.

The first insulating pattern IP1 may form a source gate insulatinglayer, a blocking insulating layer, and a drain gate insulating layer.The source gate insulating layer of the first insulating pattern IP1 maybe disposed between the source select line SSL and the source-channelcontact layer SCC, and the source gate insulating layer of the firstinsulating pattern IP1 may extend between the source select line SSL andeach of the channel structures CH. The blocking insulating layer of thefirst insulating pattern IP1 be disposed between each of the word lines(e.g., CP1 to CPn−2) and each of the channel structures CH. The draingate insulating layer of the first insulating pattern IP1 may extendbetween each of the drain select lines (e.g., CPn−1 and CPn) and each ofthe channel structures CH.

The first insulating pattern IP1 may include a first portion P1, asecond portion P2, and a third portion P3. The first portion P1 of thefirst insulating pattern IP1 may be disposed between the first selectgate layer SG1 and each of the channel structures CH. The second portionP2 of the first insulating pattern IP1 may extend from the first portionP1 and may be disposed between the second select gate layer SG2 and eachof the channel structures CH. The second portion P2 of the firstinsulating pattern IP1 may extend between each of the stacks ST and eachof the channel structures CH. The third portion P3 of the firstinsulating pattern IP1 may extend from the first portion P1 and may bedisposed between the first select gate layer SG1 and the source-channelcontact layer SCC. The first insulating pattern IP1 may include oxidesof various materials. In an embodiment, the first portion P1 and thethird portion P3 may include an oxide of silicon, and the second portionP2 may include an oxide of a nitride layer.

The second insulating pattern IP2 may be disposed between the sourcelayer SL and each of the channel structures CH. The second insulatingpattern IP2 may include an oxide. In an embodiment, the secondinsulating pattern IP2 may include an oxide of silicon.

Each of the channel structures CH may be surrounded by a tunnelinsulating layer TL and a data storage layer DL. The data storage layerDL may be formed of a material layer that is capable of storing data. Inan embodiment, the data storage layer may be formed of a material layerthat is capable of storing data that is changed using Fowler-Nordheimtunneling. The data storage layer may include a nitride layer that iscapable of charge trapping. However, the present disclosure is notlimited thereto. In an embodiment, the data storage layer may include avariable resistance material. The tunnel insulating layer TL may includea silicon oxide layer that is capable of charge tunneling.

The tunnel insulating layer TL may be separated into a first tunnelinsulating pattern TL1 and a second tunnel insulating pattern TL2 by thesource-channel contact layer SCC, and the data storage layer DL may beseparated into a first data storage pattern DL1 and a second datastorage pattern DL2 by the source-channel contact layer SCC.

The first tunnel insulating pattern TL1 and the first data storagepattern DL1 may be disposed between the first insulating pattern IP1 andeach of the channel structures CH on the source-channel contact layerSCC. The first tunnel insulating pattern TL1 may be disposed between thefirst data storage pattern DL1 and each of the channel structures CH.

The second tunnel insulating pattern TL2 and the second data storagepattern DL2 may be disposed between the second insulating pattern IP2and each of the channel structures CH under the source-channel contactlayer SCC. The second tunnel insulating pattern TL2 may be disposedbetween the second data storage pattern DL2 and each of the channelstructures CH.

The source-channel contact layer SCC may extend between each of thesource select lines SSL and the channel structures CH to secure ajunction overlap region. Accordingly, the source-channel contact layerSCC may have a shape that protrudes toward the first data storagepattern DL1 and the first tunnel insulating pattern TL1. In this case,the source-channel contact layer SCC may protrude toward the second datastorage pattern DL2 and the second tunnel insulating pattern TL2.

An upper surface TS of the first select gate layer SG1 that faces thestack ST may be disposed closer to the stack ST than an interfacebetween the source-channel contact layer SCC and each of the firsttunnel insulating pattern TL1 and the first data storage pattern DL1.Thus, even if the source-channel contact layer SCC extends between thefirst select gate layer SG1 and the channel structures CH to secure astable junction overlap region, an off characteristic of the sourceselect transistors that are connected to the source select lines SSL maybe secured. Accordingly, the operational reliability of thesemiconductor memory device may be secured without increasing the numberof stacks of the source select transistors that are disposed between thecommon source line CSL and the word lines WLs that are shown in FIG. 1 .

Each of the channel structures CH may include a channel layer CL, a coreinsulating layer CO, and a capping semiconductor layer CAP. The coreinsulating layer CO and the capping semiconductor layer CAP may bedisposed in a center region of the corresponding channel structure. Thecapping semiconductor layer CAP may overlap with the core insulatinglayer CO. The capping semiconductor layer CAP may include a dopedsemiconductor layer. In an embodiment, the capping semiconductor layerCAP may include a doped silicon with an n-type impurity. The channellayer CL may surround a sidewall of the capping semiconductor layer CAPand a sidewall of the core insulating layer CO. The channel layer CL mayextend onto a surface of the core insulating layer CO that faces thesource layer SL. The channel layer CL may be used as a channel region ofthe cell string CS that is described with reference to FIG. 1 . Thechannel layer CL may be formed of a semiconductor layer.

Each of the stacks ST and the channel structures CH may be covered witha first upper insulating layer 41. Sidewalls of each of the stacks STmay be covered with a spacer insulating layer 53 that extends in thefirst direction DR1. The spacer insulating layer 53 may extend to covera sidewall of the corresponding source select line SSL.

The spacer insulating layer 53 and the source-channel contact layer SCCmay extend to penetrate the first upper insulating layer 41. An etchingbarrier layer 61 may remain between the spacer insulating layer 53 andthe source-channel contact layer SCC. The etching barrier layer 61 mayextend to cover the first upper insulating layer 41. The etching barrierlayer 61 may include nitride.

The etching barrier layer 61 and the source-channel contact layer SCCmay be covered with a second upper insulating layer 95. The second upperinsulating layer 95, the etching barrier layer 61, and the first upperinsulating layer 41 may be penetrated by contact plugs CT.

Each of the contact plugs CT may be connected to the correspondingchannel structure CH. The bit line BL may be formed on the second upperinsulating layer 95. The bit line BL may be electrically connected tothe corresponding channel structures CH through the contact plugs CT.

FIG. 3 is a perspective view illustrating a first select gate layer SG1and a first insulating pattern IP1 shown in FIG. 2 . FIG. 4 is aperspective view illustrating the first insulating pattern IP1 shown inFIG. 2 .

Referring to FIG. 3 , the third portion P3 of the first insulatingpattern IP1 may extend along a bottom surface BT of the first selectgate layer SG1 that faces the source layer SL as shown in FIG. 2 . In anembodiment, the third portion P3 of the first insulating pattern IP1 mayextend in the second direction DR2 and a third direction DR3.

The first insulating pattern IP1 may include a plurality of firstportions P1 that extend in the first direction DR1 from the thirdportion P3. The first direction DR1, the second direction DR2, and thethird direction DR3 may correspond to the x axis, the y axis, and the zaxis of the XYZ coordinate system. This is to say that the firstdirection DR1, the second direction DR2, and the third direction DR3 maybe perpendicular to each other and each may correspond to any of the x,y, and z axes based on the orientation. The first portions P1 maypenetrate the first select gate layer SG1.

Referring to FIGS. 3 and 4 , the first insulating pattern IP1 mayinclude second portions P2 that respectively extend in the firstdirection DR1 from the first portions P1.

A hole H may be defined in a center region of each of the first andsecond portions P1 and P2. The hole H may be filled with the first datastorage pattern DL1, the first tunnel insulating pattern TL1, and thechannel structure CH as described with reference to FIG. 2 .

Each of the first portions P1 and the second portions P2 may include anoxide. The first portions P1 may be formed by oxidizing a conductivematerial for the first select gate layer SG1, and the second portions P2may be formed by oxidizing a material with a lower oxidation rate thanthe first select gate layer SG1. A first thickness D1 of each of thefirst portions P1 may be thicker than a second thickness D2 of each ofthe second portions P2. In an embodiment, each of the first portions P1of the first insulating pattern IP1 that is formed to have a relativelylarge thickness may extend toward the channel structure CH to beoverlapped by the stack ST as shown in FIG. 2 .

Referring to FIGS. 2 to 4 , the third portion P3 of the first insulatingpattern IP1 may be formed by oxidizing a conductive material for thefirst select gate layer SG1. A portion of the third portion P3 may beetched due to an etching process to secure a space in which thesource-channel contact layer SCC is to be disposed, and thus, may havean uneven surface. The uneven surface of the third portion P3 may be incontact with the source-channel contact layer SCC.

Referring to FIGS. 2 and 4 , the second insulating pattern IP2 may beformed by oxidizing a conductive material for the source layer SL. Thesource layer SL may include a material with a higher oxidation rate thanthe material layer for the second portions P2. A third thickness D3 ofthe second insulating pattern IP2 may be greater than the secondthickness D2.

FIGS. 5A to 5N are sectional views illustrating a manufacturing methodof the semiconductor memory device, in accordance with an embodiment ofthe present disclosure.

Referring to FIG. 5A, a sacrificial source layer 105 and a first selectgate layer 109 may be sequentially formed on a source layer 101. Beforethe sacrificial source layer 105 is formed, a first protective layer 103may be formed on the source layer 101. Before the first select gatelayer 109 is formed, a second protective layer 107 may be formed on thesacrificial source layer 105.

The source layer 101 may include a semiconductor layer that is dopedwith an n-type impurity. In an embodiment, the source layer 101 mayinclude an n-type doped silicon.

During a subsequent etching process for selectively removing thesacrificial source layer 105, the first protective layer 103 and thesecond protective layer 107 may be formed of a material that is capableof protecting the source layer 101 and the first select gate layer 109.In an embodiment, the first protective layer 103 may include a siliconoxynitride layer (SiCN), and the second protective layer 107 may includean oxide layer. In an embodiment, the sacrificial source layer 105 mayinclude a silicon.

The first select gate layer 109 may have a large thickness inconsideration of the height of a first groove 171A1 that is formed in asubsequent process shown in FIG. 5L. In an embodiment, the thickness ofthe first select gate layer 109 may be greater than the thickness ofeach of the sacrificial layers 111 that is formed in the subsequentprocess.

The first select gate layer 109 may include a material with a higheroxidation rate than a liner layer 125 that is formed in a subsequentprocess, shown in FIG. 5B. The first select gate layer 109 may include aconductive material that may be used as the gate electrode of the firstselect gate layer 109. In an embodiment, the first select gate layer 109may include a doped silicon layer.

Subsequently, the sacrificial layers 111 and interlayer insulatinglayers 113 may be alternately stacked with each other on the firstselect gate layer 109. The sacrificial layers 111 may be formed of amaterial that is different from that of the interlayer insulating layers113 to allow selective etching. In an embodiment, the interlayerinsulating layers 113 may include an oxide layer such as silicon oxide,and the sacrificial layers 111 may include a nitride layer such assilicon nitride. The lowermost sacrificial layer of the sacrificiallayers 111 may be disposed to be in contact with the first select gatelayer 109.

Thereafter, a third protective layer 121 may be formed on the stack ofthe sacrificial layers 111 and the interlayer insulating layers 113.

Referring to FIG. 5B, channel holes 123 may be formed through the thirdprotective layer 121, the sacrificial layers 111, and the interlayerinsulating layers 113. The channel holes 123 may penetrate the firstselect gate layer 109, the second protective layer 107, the sacrificialsource layer 105, and the first protective layer 103, and may extendinto the source layer 101. Each of the channel holes 123 may exposesidewalls of the sacrificial layers 111, the interlayer insulatinglayers 113, the first select gate layer 109, and the sacrificial sourcelayer 105.

Subsequently, the liner layer 125 may be formed on a surface of each ofthe channel holes 123. The liner layer 125 may extend onto the sidewallsof the sacrificial layers 111, the interlayer insulating layers 113, thefirst select gate layer 109, and the sacrificial source layer 105 thatare exposed through the channel holes 123.

The liner layer 125 may be formed using a deposition method with ahigh-step coverage. In an embodiment, the liner layer 125 may be formedusing Atomic Layer Deposition (ALD). The liner layer 125 may include amaterial with a lower oxidation rate than the first select gate layer109. In an embodiment, the liner layer 125 may include a nitride layer.

Referring to FIG. 5C, the liner layer 125 and a portion of the firstselect gate layer 109, shown in FIG. 5B, may be oxidized through anoxidation process. During the oxidation process, a portion of each ofthe sacrificial source layer 105 and the source layer 101 may beoxidized.

The oxidation process may be performed to oxidize the first select gatelayer 109 faster than the liner layer 125 as shown in FIG. 5B. In oneembodiment, the oxidation process may include a radical oxidationprocess. The sacrificial source layer 105 and the source layer 101 withsilicon may be oxidized faster than the liner layer 125, shown in FIG.5B.

An insulating structure 127 may be formed to surround the center regionof each of the channel holes 123 by the above described oxidationprocess. The insulating structure 127 may include an oxidized region ofthe liner layer 125, an oxidized region of the first select gate layer109, an oxidized region of the sacrificial source layer 105, and anoxidized region of the source layer 101 as shown in FIG. 5B. Due to thedifference in oxidation rates, the insulating structure 127 may bethicker at the sidewalls of the first select gate layer 109, thesacrificial source layer 105, and the source layer 101 than at thesidewall of each of the sacrificial layers 111. In an embodiment, aportion of the first select gate layer 109 that overlaps with the lowestlayer of the sacrificial layer 111 may be oxidized by the oxidationprocess to form a portion of the insulating structure 127.

Referring to FIG. 5D, a data storage layer 131 and a tunnel insulatinglayer 133 may be sequentially stacked on the insulating structure 127.Subsequently, a channel structure 140 that fills each of the channelholes 123, shown in FIG. 5C, may be formed on the tunnel insulatinglayer 133.

The data storage layer 131 and the tunnel insulating layer 133 mayinclude the same materials as the data storage layer DL and the tunnelinsulating layer TL, respectively, as described with reference to FIG. 2.

A step of forming the channel structure 140 may include forming achannel layer 135 on the tunnel insulating layer 133, forming a coreinsulating layer 137 on the channel layer 135 to fill the center regionof each of the channel holes 123 as shown in FIG. 5C, etching a portionof the core insulating layer 137 to open an upper end of each of thechannel holes 123, and filling the opened upper end of each of thechannel holes 123 with a capping semiconductor layer 139. The cappingsemiconductor layer 139 may include a doped semiconductor layer. In anembodiment, the capping semiconductor layer 139 may include an n-typedoped silicon.

Each of the insulating structure 127, the data storage layer 131, thetunnel insulating layer 133, the channel layer 135, and the cappingsemiconductor layer 139 on the third protective layer 121 may be removedto expose the third protective layer 121. In this case, the uppermostinterlayer insulating layer 113 may be protected by the third protectivelayer 121.

Referring to FIG. 5E, the third protective layer 121, shown in FIG. 5D,may be removed to expose the uppermost interlayer insulating layer 113.In this case, a portion of the insulating structure 127 and a portion ofthe data storage layer 131 may be removed.

Subsequently, a first upper insulating layer 141 may be formed on theuppermost interlayer insulating layer 113. The first upper insulatinglayer 141 may extend to cover the channel structure 140.

Referring to FIG. 5F, a slit 143 that penetrates the first upperinsulating layer 141, the sacrificial layers 111, and the interlayerinsulating layers 113, shown in FIG. 5E, may be formed. The slit 143 mayextend to penetrate the first select gate layer 109.

Subsequently, the sacrificial layers 111, shown in FIG. 5E, may beselectively removed through the slit 143. As a result, a firsthorizontal space 145A may be open between the first select gate layer109 and the lowest layer interlayer insulating layer 113, and secondhorizontal spaces 145B may be open between the adjacent interlayerinsulating layers 113.

Referring to FIG. 5G, a second select gate layer 151A may be formed inthe first horizontal space 145A, shown in FIG. 5F, and conductivepatterns 151B may be formed in each of the second horizontal spaces145B, shown in FIG. 5F.

A step of forming the second select gate layer 151A and the conductivepatterns 151B may include forming a conductive material that fills thefirst horizontal space 145A and the second horizontal spaces 145B, shownin FIG. 5F and removing a portion of the conductive material that isdisposed inside the slit 143 so that the conductive material isseparated into the second select gate layer 151A and the conductivepatterns 151B.

As described above, each of the sacrificial layers is replaced with aconductive material through the slit 143, and the conductive material isseparated into the second select gate layer 151A and the conductivepatterns 151B.

Subsequently, a spacer insulating layer 153 may be formed on thesidewalls of the slit 143. A step of forming the spacer insulating layer153 may include forming the insulating layer on the surface of the slit143, and etching the insulating layer to expose the sacrificial sourcelayer 105.

Referring to FIG. 5H, first, second, and third etching barrier layers161, 163, and 165 may be sequentially stacked on the spacer insulatinglayer 153. The first, second, and third etching barrier layers 161, 163,and 165 may extend to overlap with the first upper insulating layer 141.

Each of the first, second, and third etching barrier layers 161, 163,and 165 may include materials that are capable of protecting the spacerinsulating layer 153 during subsequent etching processes, shown in FIGS.5J, and 5L to 5M. In an embodiment, each of the first etching barrierlayer 161 and the third etching barrier layer 165 may include a nitridelayer, and the second etching barrier layer 163 may include an oxidelayer.

A portion of each of the first, second, and third etching barrier layers161, 163, and 165 may be etched to expose the sacrificial source layer105 through the bottom surface of the slit 143.

Referring to FIG. 5I, the insulating structure 127, the first protectivelayer 103, and the second protective layer 107 may be exposed byremoving the sacrificial source layer 105, shown in FIG. 5H, through theslit 143. While removing the sacrificial source layer 105, the sourcelayer 101 and the first select gate layer 109 may be protected by thefirst protective layer 103 and the second protective layer 107,respectively.

Referring to FIG. 5J, an exposed region of the insulating structure 127,shown in FIG. 5I, may be removed by an etching process to expose thedata storage layer 131. In an embodiment, the etching process may beperformed through a dry-cleaning process. The insulating structure 127may be separated into a first insulating pattern 127A1 and a secondinsulating pattern 127B1 through the etching process.

The first insulating pattern 127A1 may be disposed between the firstselect gate layer 109 and the data storage layer 131. The firstinsulating pattern 127A1 may extend between the second select gate layer151A and the data storage layer 131, between the interlayer insulatinglayers 113 and the data storage layer 131, and between the conductivepatterns 151B and the data storage layer 131. The second insulatingpattern 127B1 may be disposed between the source layer 101 and the datastorage layer 131.

During the etching of the insulating structure 127, the secondprotective layer 107, shown in FIG. 5I, may be removed, thereby exposingthe bottom surface of the first select gate layer 109. The firstprotective layer 103 may have etching resistance against the materialused to etch the insulating structure 127. Accordingly, the firstprotective layer 103 may remain. During the etching of the insulatingstructure 127, the spacer insulating layer 153 may be protected by thethird etching barrier layer 165.

Referring to FIG. 5K, the first insulating pattern 127A1, shown in FIG.5J, may extend by selectively oxidizing the first select gate layer 109.An extended first insulating pattern 127A2 may include a region oxidizedfrom the bottom surface of the first select gate layer 109. While thefirst select gate layer 109 is selectively oxidized, the firstprotective layer 103, shown in FIG. 5I, may be oxidized to form an oxidelayer 103 ox.

A selective oxidation process of the first select gate layer 109 may becontrolled so that a thickness 127D of the extended first insulatingpattern 127A2 may be larger than the thickness 133D of the tunnelinsulating layer 133. In an embodiment, the first select gate layer 109may be selectively oxidized by a wet oxidation method. In an embodiment,the thickness 127D of the extended first insulating pattern 127A2 may betwice or more than the thickness 133D of the tunnel insulating layer133.

Referring to FIG. 5L, the tunnel insulating layer 133 may be exposed byremoving a portion of the data storage layer 131 that is exposed betweenthe extended first insulating pattern 127A2, shown in FIG. 5K, and thesecond insulating pattern 127B1 through an etching process. The etchingprocess of the data storage layer 131 may be performed through a wetcleaning process. During the etching of the data storage layer 131, thethird etching barrier layer 165, shown in FIG. 5K, may be removed.Accordingly, the second etching barrier layer 163 may be exposed.

By the etching process of the data storage layer 131, the data storagelayer 131 may be separated into a first data storage pattern 131A and asecond data storage pattern 131B. The first data storage pattern 131A1may be disposed between the first select gate layer 109 and the tunnelinsulating layer 133. The first data storage pattern 131A1 may extendbetween the second select gate layer 151A and the tunnel insulatinglayer 133, between each of the interlayer insulating layers 113 and thetunnel insulating layer 133, and between each of the conductive patterns151B and the tunnel insulating layer 133. The second data storagepattern 131B1 may be disposed between the source layer 101 and thetunnel insulating layer 133.

The bottom surface of the first data storage pattern 131A may bedisposed at a higher level than the bottom surface of the first selectgate layer 109 that remains without oxidation. Accordingly, the firstgroove 171A1 may be defined between the tunnel insulating layer 133 andthe first select gate layer 109. When the data storage layer 131 isetched to define the first groove 171A1, a second groove 171B1 may bedefined between the tunnel insulating layer 133 and the source layer101.

Referring to FIG. 5M, the sidewalls of the channel structure 140 may beexposed by removing a portion of the tunnel insulating layer 133 that isexposed between the first data storage pattern 131A and the second datastorage pattern 131B, shown in FIG. 5L, through an etching process. Theetching process of the tunnel insulating layer 133 may be performedthrough a dry-cleaning process. During the etching of the tunnelinsulating layer 133, the second etching barrier layer 163, shown inFIG. 5L, may be removed. Accordingly, the first etching barrier layer161 may be exposed. During the etching of the tunnel insulating layer133, the spacer insulating layer 153 may be protected by the firstetching barrier layer 161.

Through the etching process of the tunnel insulating layer 133, thetunnel insulating layer 133 may be separated into a first tunnelinsulating pattern 133A and a second tunnel insulating pattern 133B. Afirst tunnel insulating pattern 133A may be disposed between the firstdata storage pattern 131A and the channel layer 135, and a second tunnelinsulating pattern 133B may be disposed between the second data storagepattern 131B and the channel layer 135.

During the etching of the tunnel insulating layer 133, the first groove171A1 and the second groove 171B1, shown in FIG. 5M, may be expanded. Aportion of the sidewall of the channel layer 135 that faces the sidewallof the first select gate layer 109 may be exposed by the extended firstgroove 171A2, and a portion of the sidewall of the channel layer 135that faces the sidewall of the source layer 101 may be exposed by anextended second groove 171B2.

During the etching of the tunnel insulating layer 133, the extendedfirst insulating pattern 127A2 and the second insulating pattern 127B1,shown in FIG. 5M, may be etched. Because the extended first insulatingpattern 127A2 is thicker than the tunnel insulating layer 133, theextended first insulating pattern 127A2 might not be completely removedwhile the tunnel insulating layer 133 is etched, and the extended firstinsulating pattern 127A2 may remain as a first target insulating pattern127AP. Accordingly, the present disclosure may secure a breakdownvoltage of the first target insulating pattern 127AP. The secondinsulating pattern 127B1 may remain as a second target insulatingpattern 127BP.

Referring to FIG. 5N, an extended first groove 171A2 and the extendedsecond groove 171B2, shown in FIG. 5M, may be filled with asource-channel contact layer 181. The source-channel contact layer 181may extend to fill the interior of the slit 143, shown in FIG. 5M. Thesource-channel contact layer 181 may extend to surround the sidewall ofthe channel layer 133 that is exposed between the first targetinsulating pattern 127AP and the second target insulating pattern 127BP.

The source-channel contact layer 181 may include a doped semiconductorlayer with an n-type impurity. In an embodiment, the source-channelcontact layer 181 may include an n-type doped silicon.

According to an embodiment of the present disclosure, a junction overlapregion may be formed by the source-channel contact layer 181 that fillsthe extended first groove 171A2. Compared to using a diffusion processby a thermal process, the range of the junction overlap region may bemore uniformly controlled when controlled using the etching process asin the embodiment of the present disclosure. Accordingly, the presentdisclosure may easily control the GIDL current and may easily controlthe off characteristic of the select transistor that is connected to thefirst select gate layer 109.

FIG. 6 is a block diagram illustrating a configuration of a memorysystem 1100, in accordance with an embodiment of the present disclosure.

Referring to FIG. 6 , the memory system 1100 may include a memory device1120 and a memory controller 1110.

The memory device 1120 may include the structure described withreference to FIGS. 2 to 4 . In an embodiment, the memory device 1120 mayinclude a first select gate layer that surrounds a channel structure, astack that surrounds the channel structure and overlaps with the firstselect gate layer, and an insulating pattern. The insulating pattern mayinclude a first portion between the first select gate layer and thechannel structure, and a second portion between the stack and thechannel structure. The first portion of the insulating pattern may bethicker than the second portion of the insulating pattern. The memorydevice 1120 may be a multi-chip package configured with a plurality offlash memory chips.

The memory controller 1110 may be configured to control the memorydevice 1120 and may include a Static Random Access Memory (SRAM) 1111, aCentral Processing Unit (CPU) 1112, a host interface 1113, an errorcorrection block 1114, and a memory interface 1115. The SRAM 1111 may beused as an operation memory of the CPU 1112, the CPU 1112 may performoverall control operations for data exchange of the memory controller1110, and the host interface 1113 may include a data exchange protocolfor a host that is connected to the memory system 1100. The errorcorrection block 1114 may detect and correct an error that is includedin a data that is read from the memory device 1120, and the memoryinterface 1115 may interface with the memory device 1120. In addition,the memory controller 1110 may further include a Read Only Memory (ROM)for storing code data for interfacing with the host, and the like.

The memory system 1100, configured as described above, may be a memorycard or a Solid State Drive (SSD), in which the memory device 1120 maybe combined with the memory controller 1110. For example, when thememory system 1100 is an SSD, the memory controller 1100 may communicatewith an exterior device (e.g., the host) through one among variousinterface protocols, such as a Universal Serial Bus (USB) protocol, aMulti-Media Card (MMC) protocol, a Peripheral ComponentInterconnection-Express (PCI-E) protocol, a Serial Advanced TechnologyAttachment (SATA) protocol, a Parallel Advanced Technology Attachment(PATA) protocol, a Small Computer Small Interface (SCSI) protocol, anEnhanced Small Disk Interface (ESDI) protocol, and an Integrated DriveElectronics (IDE) protocol.

FIG. 7 is a block diagram illustrating a configuration of a computingsystem 1200, in accordance with an embodiment of the present disclosure.

Referring to FIG. 7 , the computing system 1200 may include a CPU 1220,a Random Access Memory (RAM) 1230, a user interface 1240, a modem 1250,and a memory system 1210, which are electrically connected to a systembus 1260. When the computing system 1200 is a mobile device, a batteryfor supplying an operation voltage to the computing system 1200 may befurther included, and an application chip set, an image processor, amobile DRAM, and the like may be further included.

As described with reference to FIG. 6 , the memory system 1210 may beconfigured with a memory device 1212 and a memory controller 1211.

Embodiments of the present disclosure may form the insulating structureon the surface of the select gate layer by selectively oxidizing theselect gate layer. The embodiments of the present disclosure is capableof controlling the oxide thickness of the select gate layer, consideringthat the insulating structure formed on the surface of the select gatelayer may be lost due to an etching process for exposing the channelstructure. Accordingly, the embodiments of the present disclosure mayensure a breakdown voltage of the insulating structure remaining on thesurface of the select gate layer, thereby improving operationalreliability of the semiconductor memory device.

What is claimed is:
 1. A method of manufacturing a semiconductor memorydevice, the method comprising: forming a sacrificial source layer on asource layer; forming a first select gate layer on the sacrificialsource layer; alternately stacking a sacrificial layer and an interlayerinsulating layer on the first select gate layer; forming a hole in whichan insulating structure covers a surface within the hole, wherein thehole penetrates the interlayer insulating layer, the sacrificial layer,the first select gate layer, and the sacrificial source layer, andextends into the source layer; sequentially stacking a data storagelayer and a tunnel insulating layer, on the insulating structure;forming a channel structure on the tunnel insulating layer by fillingthe hole with the channel structure; removing the sacrificial sourcelayer; and selectively oxidizing the first select gate layer from abottom surface of the first select gate layer to form an extendedinsulating portion connected to the insulating structure.
 2. The methodof claim 1, further comprising: before forming the sacrificial sourcelayer, forming a first protective layer on the source layer; beforeforming the first select gate layer, forming a second protective layeron the sacrificial source layer; and after removing the sacrificialsource layer, removing the second protective layer; wherein the firstprotective layer is oxidized while the first select gate layer isselectively oxidized.
 3. The method of claim 1, further comprising:before selectively oxidizing the first select gate layer, etching theinsulating structure to expose the data storage layer between the sourcelayer and the first select gate layer; after selectively oxidizing thefirst select gate layer, sequentially etching the data storage layer andthe tunnel insulating layer to expose a sidewall of the channelstructure between the source layer and the first select gate layer; andforming a source-channel contact layer on an exposed sidewall of thechannel structure and the insulating structure.
 4. The method of claim3, wherein the sequentially etching of the data storage layer and thetunnel insulating layer is performed so that a portion of the channelstructure that faces a sidewall of the first select gate layer isexposed.
 5. The method of claim 1, wherein the selectively oxidizing ofthe first select gate layer is controlled such that an oxide thicknessof the first select gate layer is greater than that of the tunnelinsulating layer.
 6. The method of claim 1, further comprising replacingthe sacrificial layer with a conductive material.
 7. The method of claim1, wherein the forming of the hole, in which the insulating structurecovers the surface within the hole, includes: etching the interlayerinsulating layer, the sacrificial layer, the first select gate layer,and the sacrificial source layer to expose sidewalls of the interlayerinsulating layer, the sacrificial layer, the first select gate layer,and the sacrificial source layer; forming a liner layer extending overthe exposed sidewalls of the interlayer insulating layer, thesacrificial layer, the first select gate layer, and the sacrificialsource layer; and forming the insulating structure using an oxidationprocess with a higher oxidation rate with respect to the first selectgate layer than the liner layer.
 8. The method of claim 7, wherein aportion of the first select gate layer overlapping with the sacrificiallayer is oxidized through the oxidation process.